The Impact Mechanism of Y Doping on the Thermoelectric Properties and Financial Costs of Oxide for Application of Thermal Power Generation

作者：Tongqiang Xiong, Jie Zhang, Bo Feng, Bowei Yang, M. Gao, Shilong Pan, Wei Lv, Zhiwen Yang, Zikang Hu, Tong B. Tang, Wenzheng Li, Suoluoyan Yang, Haitao Zhang, Yonghong Chen · 发表于：Inorganics · 年份：2025 · DOI：10.3390/inorganics13120386 · 被引用次数：2 · 研究领域：Advanced Thermoelectric Materials and Devices、Chemical and Physical Properties of Materials、Nanowire Synthesis and Applications

This paper delves into the impact of Y doping on In2O3 thermoelectric materials. Yttrium doping significantly modifies the properties of In2O3, with far-reaching implications for its thermoelectric performance and mechanical characteristics. In the electrical domain, Y3+ substitution for In3+ optimizes carrier concentration and mobility. The alteration of the electronic band structure leads to a balanced improvement in the Seebeck coefficient and electrical conductivity, boosting the power factor. Despite initial lattice distortion-induced mobility changes, carrier screening at suitable doping levels counteracts this, enhancing overall electrical conductivity. Regarding thermal conductivity, multiple factors act synergistically. Lattice distortion, along with the generation of point defects, dislocations, nanostructuring, and modulated electron–phonon interactions, jointly reduce heat transfer. This reduction is vital for maintaining a substantial temperature gradient, a prerequisite for efficient thermoelectric conversion. The observed increase in ZT (the thermoelectric device figure of merit) with the highest value from ~0.055 to ~0.275.