V FB Tuning and D it Modulation Using LaFMD and Al 2 O 3 Dual Dipoles in PMOS Stacked Nanowire Transistors

作者：Xiaotong Mao, Xiaofeng Jia, Longyu Sun, Fei Zhao, Haoyan Liu, Shengkai Wang, Xiaolei Wang, Yongliang Li · 发表于：IEEE Electron Device Letters · 年份：2025 · DOI：10.1109/led.2025.3601190 · 被引用次数：2 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices、Nanowire Synthesis and Applications

The multiple flat band voltage (VFB) fine-tuning and low interface state density (Dit) via a novel La(iPr2-FMD)3(LaFMD) and Al2O3dual dipoles engineering technique in SiGe pMOS stacked nanowire transistors are investigated. Utilizing the opposite polarities of the dual dipoles and their respective distances from the SiGe, it achieves positive VFBshifts of 290 mV and 110 mV, and negative VFBshifts of 130 mV and 330 mV. Meanwhile, compared to untreated sample, all of them exhibit lower Ditdue to the reduced formation of Ge lower-valence oxides in the interface layer (IL). The application of this technique in SiGe channel gate-all-around (GAA) transistors results in superior threshold voltage (VT) modulation and subthreshold swing (SS). As a result, this technique can be considered as a promising candidate for high performance and low power consumption applications of SiGe channel GAA transistors.