Optimized SOI Stacked Si Nanosheet Gate-All-Around FET With Ni(Pt)Si Silicide-First and Load-Si Thinning Techniques

作者：Lei Cao, Guanqiao Sang, Qingzhu Zhang, Jiaxin Yao, Xiaohui Zhu, Q. Li, Junjie Li, Jianfeng Gao, Tingting Li, Yihong Lu, Xiaobin He, Zhenhua Wu, Yongliang Li, Junfeng Li, Huaxiang Yin, Jun Luo · 发表于：IEEE Transactions on Electron Devices · 年份：2025 · DOI：10.1109/ted.2025.3592165 · 被引用次数：3 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and interfaces、Integrated Circuits and Semiconductor Failure Analysis

In this article, to optimize the performance of silicon-on-insulator (SOI) stacked Si nanosheet (NS) gate-all-around field-effect transistor (GAAFET) with long source/drain (S/D) regions, special process techniques of Ni(Pt)Si silicide-first and Load-Si thinning are successfully integrated in the experimental devices. Because of the introduced silicide-first process, the transistor performance merits of ON-current ($\textit{I}_{\biosc{on}}$) and transconductance (Gm) are also increased by 34.19% and 80.55% for the reduction of 68.66% in the S/D parasitic resistance. Meanwhile, compared to the Bulk-Si GAAFET, the gate-induced drain leakage (GIDL) current of the SOI GAAFET is also decreased by more than one order of magnitude. However, the subthreshold characteristics of SOI GAAFETs exhibit a rapid degradation as the gate length (Lg) scaling, which is mainly due to the effect of parasitic channel in the remaining Load-Si layer. To optimize the leakage and subthreshold characteristics, the electrical impacts of Load-Si thickness (TLoad-Si) are thoroughly investigated by the experiment and TCAD simulation. The experimental SOI GAAFET fabricated by thinning Load-Si to 19 nm has obtained better subthreshold characteristics, improved normalized$\textit{I}_{\biosc{on}}$, and caused an obvious decrease of OFF-current ($\textit{I}_{\biosc{off}}$) atLg=30nm. Meanwhile, the simulation results further show that the SOI GAAFET with shorterLgneeds to continuously decreaseTLoad-Sito meet the...