Design Technology Co-Optimization of High-Density RRAM Array for Advanced CMOS Technology Node

作者：Shengyu Bao, Zongwei Wang, Yuhang Yang, Qishen Wang, Linbo Shan, Lin Bao, Yimao Cai, Ru Huang · 发表于：IEEE Transactions on Electron Devices · 年份：2025 · DOI：10.1109/ted.2025.3548582 · 被引用次数：5 · 研究领域：Advanced Memory and Neural Computing、VLSI and Analog Circuit Testing

In this work, we present a novel n transistor m resistor (nTmR) design that addresses the density limitations of the one-transistor-one-resistor (1T1R) array. The optimal design of nTmR (${n} = 3$and${m} = 2$) achieves a record-low cell area of$0.0525~\mu \text {m}^{{2}}$in the 40-nm technology node. Fabricated using a commercial 40-nm foundry logic process, the nTmR array demonstrates excellent reliability, including an endurance of 100000 cycles and a retention capability of 10 years at 150 °C. Furthermore, the proposed 3T2R array is compatible with FinFET technology nodes, enabling even greater density enhancements. This work offers a promising and practical solution for increasing resistance random access memory (RRAM) density with logic processes, facilitating cost-effective, high-performance embedded memory and computing applications.