Shengyu Bao

机构：Peking University · ORCID：0000-0001-7848-5958

发表论文 25 篇 · 总被引 244 次 · h-index 9

代表论文

• Technology-Array-Algorithm Co-Optimization of RRAM for Storage and Neuromorphic Computing: Device Non-idealities and Thermal Cross-talk (2020 · 被引 34)
• Self-Activation Neural Network Based on Self-Selective Memory Device With Rectified Multilevel States (2020 · IEEE Transactions on Electron Devices · 被引 32)
• A Logic-Process Compatible RRAM with 15.43 Mb/mm 2 Density and 10years@150°C retention using STI-less Dynamic-Gate and Self-Passivation Sidewall (2023 · 被引 31)
• Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing (2023 · IEEE Transactions on Electron Devices · 被引 25)
• Optimization Schemes for In-Memory Linear Regression Circuit With Memristor Arrays (2021 · IEEE Transactions on Circuits and Systems I Regular Papers · 被引 22)
• An isolated symmetrical 2T2R cell enabling high precision and high density for RRAM-based in-memory computing (2024 · Science China Information Sciences · 被引 19)