First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and its Scalability for High-Density 3D Ferroelectric Capacitor Memory

作者：Shan Deng, Yi Xiao, Zhouhang Jiang, Yixin Qin, Zijian Zhao, Renzheng Zhang, John S. Howe, Yushan Lee, Jiahui Duan, Rajiv Joshi, Thomas Kämpfe, Tengfei Luo, Tuo‐Hung Hou, Xiao Gong, Vijaykrishnan Narayanan, Kai Ni · 年份：2024 · DOI：10.1109/iedm50854.2024.10873477 · 被引用次数：8 · 研究领域：Ferroelectric and Negative Capacitance Devices、Advanced Memory and Neural Computing、Ferroelectric and Piezoelectric Materials

In this work, we perform a comprehensive experimental and modeling study into the scaling of vertical 2T-nC ferroelectric random-access memory (FeRAM) hybrid cell to demonstrate a high performance and high-density 3D capacitor memory. We demonstrate: i) first time successful integration of the vertical 2T-3C FeRAM cell by stacking the vertical metal-ferroelectricmetal (MFM) stack on top of Si CMOS transistors; ii) successful experimental operation of the memory cell, including the quasi-nondestructive read out (QNRO) of the polarization without write back after 106read cycles; iii) the write bit line (WBL) heavily screens the coupling between neighboring strings, making it a minor concern; V$)$aggressive stacking of the WBLs, i.e., number of MFMs in a string, could facilitate the self-boosting during write operation due to ferroelectric linear capacitance (CFE), which allows self-boosted inhibition for$V\mathrm{w}/2$scheme and worsens the$V\mathrm{w}/3$scheme as disturb increases to intolerable$2 V\mathrm{w}/3$; v) aggressive horizontal scaling significantly increases the read disturb to cells on neighboring planes due to capacitance between two WBLs$(C\mathrm{z})$.