Jiahui Duan

机构：Shanghai Institute of Geological Survey · ORCID：0000-0003-1097-5170

发表论文 55 篇 · 总被引 567 次 · h-index 13

代表论文

• A Large Window Nonvolatile Transistor Memory for High-Density and Low-Power Vertical NAND Storage Enabled by Ferroelectric Charge Pumping (2024 · IEEE Electron Device Letters · 被引 13)
• Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C) (2024 · IEEE Transactions on Electron Devices · 被引 12)
• Variation Tolerant and Energy-Efficient Charge Domain Compute-in-Memory Array with Binary and Multi-Level Cell Ferroelectric FET (2024 · 被引 10)
• First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and its Scalability for High-Density 3D Ferroelectric Capacitor Memory (2024 · 被引 9)
• Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3-D Ferroelectric Capacitor Memory (2025 · IEEE Transactions on Electron Devices · 被引 6)
• A Survey of Optimization Modeling Meets LLMs: Progress and Future Directions (2025 · 被引 5)