Carbon–Oxygen Radical Assisted Growth of Defect‐Free Graphene Films Using Low‐Temperature Chemical Vapor Deposition

作者：Haiyang Liu, Yanglizhi Li, Yangfan Wu, Dingkun Qin, Xia Qiu, Zhen Wang, Zhou Qingyu, Shuming Yu, Qin Li, Haoxiang Li, Sheng Li, Chaojie Yu, Yueming Hu, Shenxing Wang, Buhang Chen, Xiaofeng Song, Jiawei Qiang, Lin Zhou, Yiwei Li, Nan Xu, Mengxi Liu, Wan‐Jian Yin, Xiaoli Sun, Luzhao Sun, Zhongfan Liu · 发表于：Small · 年份：2024 · DOI：10.1002/smll.202405854 · 被引用次数：7 · 研究领域：Graphene research and applications、Ga2O3 and related materials、2D Materials and Applications

Low-temperature chemical vapor deposition growth of graphene films is a long-term pursuit in the graphene synthesis field because of the low energy consumption, short heating-cooling process and low wrinkle density of as-obtained films. However, insufficient energy supply at low temperature (below 850 °C) usually leads to the difficulty in carbon source dissociation, graphene growth, and defect healing. Herein, a Carbon-Oxygen (C─O) radical assisted strategy is proposed for low-temperature growth of defect-free, wrinkle-free, and single-crystalline graphene films by using methanol precursor. We provide a deep insight into the growth process fueled by methanol precursor, unveiling the dissociation pathway of methanol and the roles of intermediate C─O radicals in carbon attaching and assembling to graphene lattice without defect formation. This method shows promising prospects in the cost-effective production of high-quality graphene films and provides inspiration for growing other 2D materials.