On the relationship between imprint and reliability in Hf0.5Zr0.5O2 based ferroelectric random access memory

作者：Peng Yuan, Yuting Chen, Liguo Chai, Zhengying Jiao, Qingjie Luan, Yongqing Shen, Ying Zhang, Jibin Leng, Xueli Ma, Jinjuan Xiang, Guilei Wang, Chao Zhao · 发表于：Journal of Semiconductors · 年份：2024 · DOI：10.1088/1674-4926/45/4/042301 · 被引用次数：9 · 研究领域：Ferroelectric and Negative Capacitance Devices、Advanced Memory and Neural Computing、Semiconductor materials and devices

Abstract The detrimental effect of imprint, which can cause misreading problem, has hindered the application of ferroelectric HfO 2 . In this work, we present results of a comprehensive reliability evaluation of Hf 0.5 Zr 0.5 O 2 -based ferroelectric random access memory. The influence of imprint on the retention and endurance is demonstrated. Furthermore, a solution in circuity is proposed to effectively solve the misreading problem caused by imprint.