Jinjuan Xiang

机构：Beijing Academy of Science and Technology · ORCID：0000-0001-9728-5994

发表论文 161 篇 · 总被引 2405 次 · h-index 24

代表论文

• CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology (2024 · Nanomaterials · 被引 114)
• Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf 0.5 Zr 0.5 O 2 (2024 · IEEE Transactions on Electron Devices · 被引 18)
• First Demonstration of 4-Layer Stacked Planar Channel-All-Around (P-CAA) IGZO FETs with Cost-Effective Process for High-Density 1T1C 3D DRAM (2024 · 被引 14)
• Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C) (2024 · IEEE Transactions on Electron Devices · 被引 12)
• Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors (2024 · IEEE Transactions on Electron Devices · 被引 10)
• Unveiling the Unique Region Dependence of Bias Stability in Sub-μm IGZO TFTs Using Floating Channel Effect for 3D DRAM (2024 · IEEE Electron Device Letters · 被引 9)