Development of Enhancement-Mode GaN p-FET With Post-Etch Wet Treatment on p-GaN Gate HEMT Epi-Wafer

作者：Teng Li, Meng Zhang, Jingjing Yu, Jiawei Cui, Junjie Yang, Yanlin Wu, Han Yang, Yamin Zhang, Xuelin Yang, Maojun Wang, Shiwei Feng, Bo Shen, Jin Wei · 发表于：IEEE Transactions on Electron Devices · 年份：2024 · DOI：10.1109/ted.2024.3365676 · 被引用次数：41 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor Quantum Structures and Devices、Semiconductor materials and devices

Developing E-mode p-channel field-effect transistors (p-FETs) on the standard p-GaN gate HEMT epi-wafer is highly motivated to facilitate the realization of gallium nitride (GaN) complementary logic (CL) circuits and power-integrated circuits (PICs). The gate etching process is commonly employed in the fabrication of E-mode GaN p-FETs. However, due to gate etching-induced damage, the performance of E-mode GaN p-FETs often fails to meet expectations. To address the above issue, a post-etch wet treatment technique was developed in this work to enhance the performance of E-mode GaN p-FETs. The fabricated GaN p-FET with${L}_{\text {G}}$= 2$\mu \text{m}$exhibits an E-mode operation with${V}_{\text {th}}$= −2.9 V. The p-FET with post-etch wet treatment exhibits a current density of 5.4 mA/mm. Compared to the p-FET without wet treatment (1.9 mA/mm), the current density has increased by more than double. Atomic force microscopy (AFM) was utilized to characterize the surface morphology and validate the effectiveness of post-etch wet treatment. To suppress the leakage current, multienergy fluorine ion implantation was implemented for planar isolation of GaN p-FETs, high${I}_{\text {ON}}/{I}_{\text {OFF}}$with over$6\times 10^{{5}}$was obtained.