Han Yang
机构:Peking University · ORCID:0009-0008-8475-7049
发表论文 32 篇 · 总被引 234 次 · h-index 9
代表论文
- High-Current E-Mode InGaN/GaN p-FET on p-GaN Gate HEMT Platform (2024 · IEEE Electron Device Letters · 被引 19)
- High-Performance Enhancement-Mode GaN p-FET Fabricated With an Etch-Stop Process (2025 · IEEE Transactions on Electron Devices · 被引 13)
- Polarization Enhanced GaN Complementary Logic Circuits with Short Propagation Delay (2024 · 被引 13)
- 10-kV E-mode GaN Lateral Superjunction Transistor (2024 · 被引 10)
- Polarization-Assisted Acceptor Ionization in E-Mode GaN p-FET on 650-V E-mode p-GaN Gate HEMT (EPH) Platform (2024 · 被引 9)
- Design and Development of Polarization-Enhanced E-Mode GaN p-FET and Complementary Logic (CL) Circuits (2025 · IEEE Transactions on Electron Devices · 被引 8)