6500-V E-mode Active-Passivation p-GaN Gate HEMT with Ultralow Dynamic R ON

作者：Jiawei Cui, Jin Wei, Maojun Wang, Yanlin Wu, Junjie Yang, Teng Li, Jingjing Yu, Han Yang, Xuelin Yang, Jinyan Wang, Xiaosen Liu, Daisuke Ueda, Bo Shen · 年份：2023 · DOI：10.1109/iedm45741.2023.10413742 · 被引用次数：26 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor Quantum Structures and Devices、Thin-Film Transistor Technologies

This work demonstrates the E-mode active-passivation p-GaN gate HEMTs (AP-HEMTs) on sapphire substrate with blocking capabilities up to 6500 V. The AP-HEMT features an active passivation (i.e. a thinned p-GaN layer) extending from the gate edge towards near the drain contact. The 2DEG under the p-GaN gate and the active passivation is fully depleted at zero gate bias, resulting in E-mode operation with a Vth= 0.8 V at ID= 10 μA/mm. With a positive VGSof 3.5 V, the AP-HEMT with LGD= 77 μm presents an RONof 38.2 Ω-mm, and RON,SPof 33.62 mΩ·cm2. In the OFF-state, the active passivation is depleted from the drain side towards the gate edge. For LGD= 77 μm, the AP-HEMT presents a high breakdown voltage of 6573 V, resulting in a FOM (BV2/RON) of 1.29 GW/cm2that approaches the SiC limit. In the AP-HEMT, the effect of surface charges is screened by the active passivation layer, resulting in ultralow dynamic RON. For the AP-HEMT with LGD= 77 μm, the measured dynamic RON/static RONis 1.15 after a 10-ms 3000-V VDS-OFFstress (delay time = 150 μs) and 1.02 after a 3-s 4500-V VDS-OFFstress (delay time = 300 ms). The results demonstrate that the active passivation can extend the E-mode p-GaN gate HEMT technology to kV-level applications.