Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions

作者：Yueyang Jia, Qianqian Yang, Yue‐Wen Fang, Yue Lu, Maosong Xie, Jianyong Wei, Jianjun Tian, Linxing Zhang, Rui Yang · 发表于：Nature Communications · 年份：2024 · DOI：10.1038/s41467-024-44927-7 · 被引用次数：46 · 研究领域：Ferroelectric and Piezoelectric Materials、Ferroelectric and Negative Capacitance Devices、Semiconductor materials and devices

Abstract Ferroelectric tunnel junctions are promising towards high-reliability and low-power non-volatile memories and computing devices. Yet it is challenging to maintain a high tunnelling electroresistance when the ferroelectric layer is thinned down towards atomic scale because of the ferroelectric structural instability and large depolarization field. Here we report ferroelectric tunnel junctions based on samarium-substituted layered bismuth oxide, which can maintain tunnelling electroresistance of 7 × 10 5 with the samarium-substituted bismuth oxide film down to one nanometer, three orders of magnitude higher than previous reports with such thickness, owing to efficient barrier modulation by the large ferroelectric polarization. These ferroelectric tunnel junctions demonstrate up to 32 resistance states without any write-verify technique, high endurance (over 5 × 10 9 ), high linearity of conductance modulation, and long retention time (10 years). Furthermore, tunnelling electroresistance over 10 9 is achieved in ferroelectric tunnel junctions with 4.6-nanometer samarium-substituted bismuth oxide layer, which is higher than commercial flash memories. The results show high potential towards multi-level and reliable non-volatile memories.