Qianqian Yang

机构：South China Normal University, ON Semiconductor (China), Nanopolis Suzhou (China), University of Science and Technology Beijing · ORCID：0000-0001-6706-2853

发表论文 14 篇 · 总被引 259 次 · h-index 7

代表论文

• Ferroelectricity in layered bismuth oxide down to 1 nanometer (2023 · Science · 被引 109)
• Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions (2024 · Nature Communications · 被引 46)
• Controllable chemical composition in double-perovskite Bi0.5Sm0.5FeO3 epitaxial thin films for ferroelectric, photovoltaic, and ferromagnetic properties (2022 · Chemical Engineering Journal · 被引 33)
• Anion-induced robust ferroelectricity in sulfurized pseudo-rhombohedral epitaxial BiFeO 3 thin films via polarization rotation (2023 · Materials Horizons · 被引 17)
• Design of controllable magnon frequency comb in synthetic ferrimagnets (2024 · Physical review. B./Physical review. B · 被引 16)
• Strain-controlled oxygen vacancy for robust ferroelectric BiSmFe2O6- δ double-perovskite epitaxial thin films (2024 · Applied Physics Reviews · 被引 16)