Homojunction-loaded inverters based on self-biased molybdenum disulfide transistors for sub-picowatt computing

作者：Xiaofu Wei, Xiankun Zhang, Huihui Yu, Gao Li, Wenhui Tang, Mengyu Hong, Zhangyi Chen, Zhuo Kang, Zheng Zhang, Yue Zhang · 发表于：Nature Electronics · 年份：2024 · DOI：10.1038/s41928-023-01112-w · 被引用次数：56 · 研究领域：2D Materials and Applications、Ferroelectric and Negative Capacitance Devices、Advanced Memory and Neural Computing