Demonstration of 1200-V E-Mode GaN-on-Sapphire Power Transistor With Low Dynamic ON-Resistance Based on Active Passivation Technique

作者：Jiawei Cui, Maojun Wang, Yanlin Wu, Junjie Yang, Han Yang, Jingjing Yu, Teng Li, Xuelin Yang, Xiaosen Liu, Kai Cheng, Jinyan Wang, Bo Shen, Jin Wei · 发表于：IEEE Electron Device Letters · 年份：2023 · DOI：10.1109/led.2023.3341413 · 被引用次数：21 · 研究领域：GaN-based semiconductor devices and materials、Thin-Film Transistor Technologies、Semiconductor Quantum Structures and Devices

This letter demonstrates a 1200-V E-mode GaN-on-sapphire power transistor based on active passivation technique. The active passivation concept utilizes a thin p-GaN layer extending from the p-GaN gate towards near the drain to screen the surface traps. The fabricated active-passivation HEMT (AP-HEMT) with${L}_{\text {GD}}$of$27 ~\mu \text{m}$exhibits a low${R}_{\text {ON}}$of$16.9 \Omega \cdot $mm, corresponding to a specific${R}_{\text {ON}}$$({R}_{\text {ON, SP}})$of 6.42$\text{m}\Omega \cdot $cm2. A breakdown voltage (BV) over 2000 V is obtained for the AP-HEMT. Besides, the AP-HEMT showcased excellent dynamic performance due to the surface shielding effect provided by the active passivation. Dynamic ON-resistance was characterized$120 ~\mu \text{s}$after a 10-ms VDS-OFF stress. At VDS-OFF = 1200 V, the ratio of dynamic${R}_{\text {ON}}$to static${R}_{\text {ON}}$is 1.09. The results highlight the superior capabilities of active passivation technique for 1200-V GaN power transistors.