Enhanced Total Ionizing Dose Response of 16 nm n-FinFETs With a Single Fin

作者：Xuewen Wei, Jiangwei Cui, Deng Luo, Gang Yu, Yudong Li, Qi Guo, Qiwen Zheng · 发表于：IEEE Electron Device Letters · 年份：2023 · DOI：10.1109/led.2023.3323315 · 被引用次数：12 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Semiconductor materials and devices、Radiation Effects in Electronics

In this letter, total ionizing dose (TID) response of bulk n-type Fin Field-Effect Transistor (n-FinFET) is investigated with the various number of fins. Experiments show that only the single fin n-FinFET exhibits significant radiation damage, while the degradation of multi-fin devices is observed to be minimal. 3D TCAD simulations indicate that relative positions between fins and STI play a critical role in the TID response of n-FinFET.