A SiC 3D Power IC Directly Integrating a Power MOSFET With Its CMOS Gate Driver Using Flip Chip Bonding

作者：Atsushi Yao, Mitsuo Okamoto, Shinji Sato, Daiki Yamaguchi, Hiroshi Sato · 年份：2023 · DOI：10.1109/ispsd57135.2023.10147700 · 被引用次数：7 · 研究领域：Silicon Carbide Semiconductor Technologies、3D IC and TSV technologies、Electromagnetic Compatibility and Noise Suppression

In this study, the first 3D direct integration of a SiC power MOSFET and its SiC CMOS gate driver is achieved using flip chip bonding, enabling a wire bondless connection. Switching operation of the resulting “SiC 3D power IC” is achieved experimentally at 600 V and 20 A for the first time at speeds of 102 and 67.0 V/ns for turn-on and turn-off operations, respectively. Further experiments demonstrated that the switching speed of the first version of the SiC 3D power IC is improved by over 14% compared to previous devices using wire bonding (wire bonding devices). Numerical predictions indicate that the SiC 3D power IC has the potential to more than double the switching speed of wire bonding devices and realizes switching speeds of 300 V/ns or more if the gate resistance is decreased.