Mitsuo Okamoto

机构：National Institute of Advanced Industrial Science and Technology · ORCID：0000-0003-3261-8705

发表论文 186 篇 · 总被引 1820 次 · h-index 23

代表论文

• Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs (2022 · Journal of Applied Physics · 被引 17)
• Impact of nitridation on the reliability of 4H-SiC(1120) MOS devices (2022 · Applied Physics Express · 被引 12)
• Comprehensive physical and electrical characterizations of NO nitrided SiO 2 /4H-SiC(1120) interfaces (2022 · Japanese Journal of Applied Physics · 被引 11)
• Characterization of nitrided SiC(1 1‾ 00) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy (2024 · Materials Science in Semiconductor Processing · 被引 8)
• A SiC 3D Power IC Directly Integrating a Power MOSFET With Its CMOS Gate Driver Using Flip Chip Bonding (2023 · 被引 8)
• Impact of post-nitridation annealing in CO 2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors (2022 · Applied Physics Express · 被引 8)