Defect-induced Analogue Resistive Switching Behavior in FeO x -based Memristor and Synaptic Paired-pulse Facilitation Feature

作者：Tongyu WANG, Haofeng Ran, Guangdong Zhou · 发表于：Journal of Inorganic Materials · 年份：2023 · DOI：10.15541/jim20220721 · 被引用次数：2 · 研究领域：Advanced Memory and Neural Computing、Neuroscience and Neural Engineering

A memristor with analogue resistive switching (RS) memory behaviors could provide enough conductance states for high-efficiency neuromorphic computing because this type RS memory feature can avoid conductance clamping, steeply change, and computing invalidation.Simulating the behavior of biological synapses under stimulus pulse can better reveal the bionic characteristic mechanism of electronic devices and provide support for high performance neuromorphic computation.Synaptic paired-pulse facilitation (PPF) is an important characteristic of biological synapses, reflecting the facilitation and adaptation process under external stimuli, which is crucial to reveal