Haofeng Ran

机构：Southwest University, Institute of Scientific and Technical Information, Guangxi Zhuang Autonomous Region Health and Family Planning, Chongqing Institute of Green and Intelligent Technology · ORCID：0009-0008-0334-5705

发表论文 9 篇 · 总被引 103 次 · h-index 4

代表论文

• Self‐Rectifying Switching Memory Based on HfO x /FeO x Semiconductor Heterostructure for Neuromorphic Computing (2024 · Advanced Functional Materials · 被引 51)
• Anomalous Phase Change in SbSe x Memristors for Ultrafast Image Encryption (2025 · Advanced Materials · 被引 22)
• Highly sensitive flexible strain sensor based on GSB-enhanced three-dimensional graphene composite (2022 · Physica E Low-dimensional Systems and Nanostructures · 被引 10)
• A physical memristor model for Pavlovian associative memory (2024 · Chinese Physics B · 被引 5)
• Investigation of the NbO x phase change self-selective memristor-based photoelectric synapse features (2025 · Physical Chemistry Chemical Physics · 被引 3)
• Defect-induced Analogue Resistive Switching Behavior in FeO x -based Memristor and Synaptic Paired-pulse Facilitation Feature (2023 · Journal of Inorganic Materials · 被引 2)