Hafnia-Based FeRAM: A Path Toward Ultra-High Density for Next-Generation High-Speed Embedded Memory

作者：Nazila Haratipour, Sou-Chi Chang, Shriram Shivaraman, Christopher M. Neumann, Yu-Ching Liao, Bernal Granados Alpizar, I‐Cheng Tung, Hai Li, Vachan Kumar, B.S. Doyle, Sarah E. Atanasov, J. Peck, Nafees Kabir, Gary Allen, T. Hoff, A. Oni, Sourav Dutta, Tristan A. Tronic, Anandi Roy, Fatih Hamzaoglu, Robert Bristol, M. Metz, Ian A. Young, J. Kavalieros, Uygar E. Avci · 发表于：2022 International Electron Devices Meeting (IEDM) · 年份：2022 · DOI：10.1109/iedm45625.2022.10019560 · 被引用次数：34 · 研究领域：Ferroelectric and Negative Capacitance Devices、Advanced Memory and Neural Computing、MXene and MAX Phase Materials

FeRAM is a promising candidate for next generation embedded DRAM and has attracted significant attention with the advancements in hafnia-based ferroelectric research. In this work, we will review record specifications achieved for implementing FeRAM as an embedded memory such as 2 nanoseconds switching speed, >1012read/write endurance cycles, low operation voltage, long retention, and operation under worst case anti-ferroelectric (AFE) capacitors process variations at elevated temperature of 85°C. Array-level circuit simulation based on the advanced technology node also indicates that FeRAM can be used as a high-density embedded memory. Finally, functional 3D stacked AFE capacitors with matched performance to conventional trench AFE capacitors are demonstrated for the first time paving the path toward ultrahigh density embedded FeRAM.