Electret/High- k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

作者：Cheng Chang, Yushan Li, Yan Zhang, Wentao Shuai, Haonan Liu, Ting Huang, Zhen Fan, Takeo Minari, Guofu Zhou, Ruiqiang Tao, Xubing Lu, Jun‐Ming Liu · 发表于：IEEE Electron Device Letters · 年份：2022 · DOI：10.1109/led.2022.3189758 · 被引用次数：7 · 研究领域：Advanced Memory and Neural Computing、Transition Metal Oxide Nanomaterials、Perovskite Materials and Applications

Organic synaptic transistors are highly appreciated for brain-like and biocompatible computing systems, but remain challenging for mimicking linear and symmetric weight updates at low voltages. Here, we propose a spontaneously and simply formed floating gate structure to address this issue by regulating the charge traps around the discrete small grains in spin-coated, low temperature functionalized (200 °C), and high-${k}$(>10) zirconium oxide (ZrOx) dielectrics. Basic learning and memory synaptic functionalities with excellent long-term plasticity, near linear and ambipolar weight update protocol, and the highest image recognition accuracy record of 97.4% are achieved. This work offers great significance in the fabrication of cost-effective and energy-efficient neuron network.