Wentao Shuai

机构：South China Normal University · ORCID：0009-0001-9756-2637

发表论文 19 篇 · 总被引 179 次 · h-index 7

代表论文

• Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf0.5Zr0.5O2 thin films by implementing W electrode (2021 · Journal of Material Science and Technology · 被引 68)
• Bend‐Resistant and Energy‐Friendly GO‐PVA/PVA Polymer Electret Synaptic Transistors for Neuromorphic Computations (2023 · Advanced Functional Materials · 被引 27)
• Superior and ultrafast energy storage performance of relaxorantiferroelectric HfO2-based supercapacitors (2023 · Energy storage materials · 被引 18)
• Ferroelectric Hf0.5Zr0.5O2-gated synaptic transistors with large conductance dynamic range and multilevel states (2023 · Science China Materials · 被引 14)
• Critical Effect of Oxygen Pressure in Pulsed Laser Deposition for Room Temperature and High Performance Amorphous In-Ga-Zn-O Thin Film Transistors (2022 · Nanomaterials · 被引 14)
• Tunable Linearity of Weight Update in Low Voltage Synaptic Transistors with Periodic High‐ k Laminates (2022 · Advanced Electronic Materials · 被引 12)