Drift velocity saturation in MOS transistors

作者：G. Baum, H. Beneking · 发表于：IEEE Transactions on Electron Devices · 年份：1970 · DOI：10.1109/t-ed.1970.17014 · 被引用次数：64 · 研究领域：Advancements in Semiconductor Devices and Circuit Design、Silicon Carbide Semiconductor Technologies、Analog and Mixed-Signal Circuit Design

It is shown that the drift velocity saturation of the current carriers in the channel of a MOSFET iS an important factor in the analysis of the electrical behavior of such devices. The theory presented here, which includes this effect, shows improved agreement with measured output characteristics.