Hot-carrier induced electron mobility and series resistance degradation in LDD NMOSFET's

作者：Yutao Pan, K.K. Ng, C.C. Wei · 发表于：IEEE Electron Device Letters · 年份：1994 · DOI：10.1109/55.338416 · 被引用次数：48 · 研究领域：Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design、Silicon Carbide Semiconductor Technologies

The mobility and the series resistant degradation of LDD NMOSFET's were determined independently for the first time. Three device structures with different styles of drain engineering: 1) modestly doped LDD; 2) large-angle-tilt implanted drain, and 3) buried LDD were studied. We observed clearly that the series resistant drift dominates the initial device degradation and the relative importance of the mobility degradation increases as the stress time proceeds. Our work provides a useful guideline for device reliability optimization and for the development of the device degradation model for the circuit reliability simulation.>