Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

作者：Shigefusa F. Chichibu, T. Azuhata, T. Sota, Shuji Nakamura · 发表于：Applied Physics Letters · 年份：1996 · DOI：10.1063/1.116981 · 被引用次数：1217 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor materials and devices、Semiconductor Quantum Structures and Devices

Emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures were investigated by means of modulation spectroscopy. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons.