Shigefusa F. Chichibu

机构：Tohoku University · ORCID：0000-0001-9558-1642

发表论文 616 篇 · 总被引 17860 次 · h-index 62

代表论文

• Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers (2024 · Journal of Applied Physics · 被引 16)
• Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation (2024 · physica status solidi (b) · 被引 16)
• Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride (2024 · Scientific Reports · 被引 13)
• Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy (2025 · Applied Physics Letters · 被引 4)
• Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements (2025 · Journal of Applied Physics · 被引 3)
• Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method (2024 · Applied Physics Letters · 被引 3)