Precision metrology of integrated circuit critical dimensions using in situ differential scanning electron microscopy

作者：Albert Sicignano, Mehdi Vaez-Iravani · 发表于：Scanning · 年份：1988 · DOI：10.1002/sca.4950100507 · 被引用次数：5 · 研究领域：Electron and X-Ray Spectroscopy Techniques、Advancements in Photolithography Techniques、Integrated Circuits and Semiconductor Failure Analysis

Abstract A technique for performing precision measurements of critical dimensions (CD) on integrated circuit (IC) features using the scanning electron microscope (SEM) is presented. The method is based on obtaining true in situ differential SEM video signals of IC features. The technique is characterized by its high sensitivity to feature edges, and relative slopes. Results are presented on the application of this technique to SEM measurements of IC patterns in silicon, photoresist, and aluminum. The method affords the capability of accurate pattern alignment during SEM imaging preceding linewidth measurements.