Optical properties of tensile-strained wurtzite GaN epitaxial layers

作者：Shigefusa F. Chichibu, T. Azuhata, T. Sota, Hiroshi Amano, Isamu Akasaki · 发表于：Applied Physics Letters · 年份：1997 · DOI：10.1063/1.118958 · 被引用次数：63 · 研究领域：GaN-based semiconductor devices and materials、ZnO doping and properties、Semiconductor Quantum Structures and Devices

Photo-modulated electroreflectance and photoluminescence spectra of wurtzite GaN epilayers grown on a 6H-SiC (0001)Si or a Si (111) substrate were measured as a function of temperature. The valence band structure of a biaxially tensile-strained (−0.15% in c axis) epilayer was drastically changed compared to that in unstrained and compressively strained ones; the optical transition between the conduction and the uppermost valence band exhibiting the minimum transition energy was polarized parallel to the c axis, which is characteristic of the spin split-off valence band in unstrained crystal.