Zhehong Qian
机构：Fudan University, Shanghai Fudan Microelectronics (China)
发表论文 4 篇 · 总被引 13 次 · h-index 2
代表论文
- Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress (2024 · IEEE Transactions on Device and Materials Reliability · 被引 9)
- A Novel High-Speed Split-Gate Trench Carrier-Stored Trench-Gate Bipolar Transistor with Enhanced Short-Circuit Roughness (2024 · Micromachines · 被引 3)
- A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability (2025 · Scientific Reports · 被引 1)
- A novel Self-Biased pMOS Clamped Deep Trench CSTBT with Enhanced Short-Circuit Capability (2024 · Research Square)