Cheng Ji
机构:ON Semiconductor (United States), Taiwan Semiconductor Manufacturing Company (China)
发表论文 15 篇 · 总被引 98 次 · h-index 5
代表论文
- Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes (2016 · Optics Express · 被引 40)
- Temperature-dependent polarization characteristics in Al0.25Ga0.75N/AlN/GaN heterostructure (2016 · Applied Physics Letters · 被引 13)
- Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask (2016 · ACS Applied Materials & Interfaces · 被引 12)
- High uniform growth of 4-inch GaN wafer via flow field optimization by HVPE (2016 · Journal of Crystal Growth · 被引 9)
- High-Performance 10-kV-Rated, 175-mΩ 4H-SiC MOSFETs With MeV JFET Implantation and Efficient Termination (2025 · IEEE Transactions on Electron Devices · 被引 7)
- Photoluminescence and transport properties of fluorinated graphene via a weak fluorination strategy (2024 · Applied Physics Letters · 被引 4)