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Cheng Ji

机构:ON Semiconductor (United States), Taiwan Semiconductor Manufacturing Company (China)

发表论文 15 篇 · 总被引 98 次 · h-index 5

代表论文

  • Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes (2016 · Optics Express · 被引 40)
  • Temperature-dependent polarization characteristics in Al0.25Ga0.75N/AlN/GaN heterostructure (2016 · Applied Physics Letters · 被引 13)
  • Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask (2016 · ACS Applied Materials & Interfaces · 被引 12)
  • High uniform growth of 4-inch GaN wafer via flow field optimization by HVPE (2016 · Journal of Crystal Growth · 被引 9)
  • High-Performance 10-kV-Rated, 175-mΩ 4H-SiC MOSFETs With MeV JFET Implantation and Efficient Termination (2025 · IEEE Transactions on Electron Devices · 被引 7)
  • Photoluminescence and transport properties of fluorinated graphene via a weak fluorination strategy (2024 · Applied Physics Letters · 被引 4)