Tao Hu

机构：Chinese Academy of Sciences, Institute of Microelectronics, Institute of Microelectronics · ORCID：0009-0000-8201-4358

发表论文 14 篇 · 总被引 70 次 · h-index 3

代表论文

• Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂ (2024 · IEEE Electron Device Letters · 被引 44)
• Improvement of Memory Window of Silicon Channel Hf₀.₅Zr₀.₅O₂ FeFET by Inserting Al₂O₃/HfO₂/Al₂O₃ Top Interlayer (2024 · IEEE Transactions on Electron Devices · 被引 15)
• Investigating the Charge Trapping Behavior and Enhancing the Memory Window of Silicon Channel Hf0.5Zr0.5O2 FeFET With SiO2/HfO2/SiO2 Gate Side Interlayer (2025 · IEEE Transactions on Electron Devices · 被引 3)
• Impact of Saturated Spontaneous Polarization on the Memory Window and Endurance of Hafnium-Based Si Channel FeFET (2025 · IEEE Transactions on Electron Devices · 被引 3)
• A One-Transistor DRAM Memory Cell Using HfO2-Based Ferroelectric-Assisted Charge Trapping Concept (2025 · IEEE Transactions on Electron Devices · 被引 2)
• The Vth shift mechanism in MIFIS FeFET: A field-driven perspective (2025 · Applied Physics Letters · 被引 1)