Saifei Dai
机构：Institute of Microelectronics, Institute of Microelectronics · ORCID：0000-0001-7433-9347
发表论文 34 篇 · 总被引 227 次 · h-index 7
代表论文
- Impact of Top SiO₂ Interlayer Thickness on Memory Window of Si Channel FeFET With TiN/SiO₂/Hf₀.₅Zr₀.₅O₂/SiOx/Si (MIFIS) Gate Structure (2024 · IEEE Transactions on Electron Devices · 被引 20)
- Improvement of Memory Window of Silicon Channel Hf₀.₅Zr₀.₅O₂ FeFET by Inserting Al₂O₃/HfO₂/Al₂O₃ Top Interlayer (2024 · IEEE Transactions on Electron Devices · 被引 15)
- Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C) (2024 · IEEE Transactions on Electron Devices · 被引 12)
- Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors (2024 · IEEE Transactions on Electron Devices · 被引 10)
- Effect of Nitridation of Bottom Interlayer in FeFETs With the TiN/Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 /Bottom Interlayer/Si Substrate Structure (2024 · IEEE Transactions on Electron Devices · 被引 7)
- Improved Memory Window and Retention of Silicon Channel Hf0.5Zr0.5O2 FeFET by Using SiO2/HfO2/SiO2 Gate Side Interlayer (2025 · 被引 6)