Yanjun Li

机构：Zhejiang University · ORCID：0000-0003-4417-0215

发表论文 13 篇 · 总被引 128 次 · h-index 6

代表论文

• 3.3 kV-class NiO/β-Ga2O3 heterojunction diode and its off-state leakage mechanism (2024 · Applied Physics Letters · 被引 36)
• 2.5kV/3.78mΩ⋅cm² Low Forward Voltage Vertical β-Ga₂O₃ Schottky Rectifier With Field Plate Assisted Deep Mesa Termination (2024 · IEEE Electron Device Letters · 被引 32)
• Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure (2022 · IEEE Transactions on Electron Devices · 被引 13)
• Investigation of conductivity modulation in vertical GaN-on-GaN PiN diode under high current density (2023 · Applied Physics Letters · 被引 12)
• Influence of JFET Region on Heavy-Ion-Induced Gate Damage in SiC Power MOSFET (2025 · IEEE Transactions on Nuclear Science · 被引 8)
• High-Performance 10-kV-Rated, 175-mΩ 4H-SiC MOSFETs With MeV JFET Implantation and Efficient Termination (2025 · IEEE Transactions on Electron Devices · 被引 7)