Kuanglei Chen

机构：Beijing University of Technology, Advanced Technology & Materials (China), Future Earth, Advanced Materials and Devices (United States), University of Science and Technology Beijing

发表论文 13 篇 · 总被引 227 次 · h-index 5

代表论文

• Two-dimensional Czochralski growth of single-crystal MoS2 (2025 · Nature Materials · 被引 107)
• Record-high saturation current in end-bond contacted monolayer MoS2 transistors (2021 · Nano Research · 被引 47)
• Approaching Ohmic Contacts for Ideal Monolayer MoS 2 Transistors Through Sulfur‐Vacancy Engineering (2023 · Small Methods · 被引 37)
• Atomic layer bonding contacts in two-dimensional semiconductors (2025 · Science · 被引 23)
• An Ultrahigh‐Rectification‐Ratio WSe 2 Homojunction Defined by High‐Efficiency Charge Trapping Effect (2023 · Advanced Electronic Materials · 被引 5)
• Scalable Reconfigurable Circuits with Double-Gate MoS 2 Transistors (2026 · ACS Nano · 被引 2)