Hongyi Xu

机构：ON Semiconductor (United States), Hefei University of Technology, Zhejiang University · ORCID：0000-0002-2316-2972

发表论文 68 篇 · 总被引 718 次 · h-index 15

代表论文

• Perfect Is Perfect: Nickel Prussian Blue Analogue as A High‐Efficiency Electrocatalyst for Hydrogen Peroxide Production (2024 · Angewandte Chemie International Edition · 被引 19)
• Experimental study of a SiC manifold microchannel heat sink under background and hotspot heating scenarios at ultra-high heat flux (2025 · International Journal of Heat and Mass Transfer · 被引 15)
• 1.2-kV Planar SiC MOSFETs With Improved Short-Circuit Capability by Adding Plasma Spreading Layer (2023 · IEEE Transactions on Electron Devices · 被引 15)
• Electrical Characterization and Analysis of 4H-SiC Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits (2023 · 被引 10)
• Influence of JFET Region on Heavy-Ion-Induced Gate Damage in SiC Power MOSFET (2025 · IEEE Transactions on Nuclear Science · 被引 8)
• High-Performance 10-kV-Rated, 175-mΩ 4H-SiC MOSFETs With MeV JFET Implantation and Efficient Termination (2025 · IEEE Transactions on Electron Devices · 被引 7)