Bingyi Ye

机构：Shanghai Normal University, East China Normal University · ORCID：0000-0002-7671-2800

发表论文 46 篇 · 总被引 197 次 · h-index 8

代表论文

• Novel Complementary Field-Effect Transistors With Tree-Type Channel for 3-nm Technology Node (2025 · IEEE Transactions on Electron Devices · 被引 10)
• Evaluation of 1T-DRAM Based on Novel Triple-Gate Nanosheet RFET With Surrounded SiGe Channel (2025 · IEEE Transactions on Electron Devices · 被引 4)
• ATMAD: Agile Transistor Compact Modeling with Parameter Extraction Based on Automatic Differentiation (2026 · ACM Transactions on Design Automation of Electronic Systems · 被引 1)
• 8.4 A 112Gb/S/Wire Single-Ended Simultaneous Bi-Directional Transceiver with Dynamic Equalizer for Die-to-Die Interface in 28nm CMOS (2026 · 被引 1)
• Novel Triple-Gate Nanosheet RFET With Embedded SiGe Surrounding Channel for Enhanced On-State Current (2026 · IEEE Transactions on Electron Devices · 被引 1)
• Compact Modeling of Process Variation and Reliability Predictions for Nanosheet Gate-All-Around FET (2025 · IEEE Transactions on Device and Materials Reliability · 被引 1)