Runhao Han

机构：Chinese Academy of Sciences, Institute of Microelectronics, Integrated Chinese Medicine (China), Institute of Microelectronics · ORCID：0000-0001-9923-5456

发表论文 21 篇 · 总被引 88 次 · h-index 4

代表论文

Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂ (2024 · IEEE Electron Device Letters · 被引 44)
The formation mechanism of TiC/Ni composites fabricated by pressureless reactive sintering (2021 · International Journal of Refractory Metals and Hard Materials · 被引 25)
Crystal structure, lattice vibrational characteristics, and dielectric properties of Ba(Mg1/2Mo1/2)O3 ceramics sintered at different temperatures (2021 · Materials Research Bulletin · 被引 9)
Improved Memory Window and Retention of Silicon Channel Hf0.5Zr0.5O2 FeFET by Using SiO2/HfO2/SiO2 Gate Side Interlayer (2025 · 被引 6)
The Top Electrode Tensile Stress Effect on Ferroelectricity of Hf0.5Zr0.5O2 Thin Films (2023 · 被引 2)
Investigation of Gate Injection Charges Behavior on FeFETs with TiN/Al2O3/Hf0.5Zr0.5O2/SiON/Si Structure by Analyzing ISPP/ISPE (2024 · 被引 1)