Feng‐Min Lai

机构：TransWorld University, National Yunlin University of Science and Technology · ORCID：0000-0003-0880-9974

发表论文 60 篇 · 总被引 290 次 · h-index 12

代表论文

• Effect on passivation mechanism and properties of HfO2/crystalline-Si interface under different annealing atmosphere (2023 · Solar Energy Materials and Solar Cells · 被引 22)
• Enhanced Responsivity of Solar Blind Ultraviolet Photodetector by PEALD Deposited Zn-Doped Ga 2 O 3 Thin Films (2023 · IEEE Transactions on Electron Devices · 被引 17)
• Plasma power effect on crystallinity and density of AlN films deposited by plasma enhanced atomic layer deposition (2023 · Journal of Materials Research and Technology · 被引 14)
• Substrate temperature effects on PEALD HfAlO dielectric films for IGZO-TFT applications (2024 · Applied Surface Science · 被引 12)
• The Enhanced Performance of Oxide Thin-Film Transistors Fabricated by a Two-Step Deposition Pressure Process (2024 · Nanomaterials · 被引 12)
• Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance (2024 · Journal of Science Advanced Materials and Devices · 被引 12)