V. V. Andryushkin

机构：ITMO University · ORCID：0000-0002-7471-8627

发表论文 33 篇 · 总被引 124 次 · h-index 5

代表论文

• High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance (2022 · IEEE Journal of Quantum Electronics · 被引 34)
• Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems (2023 · IEEE Photonics Technology Letters · 被引 24)
• 20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region (2022 · Optical Engineering · 被引 13)
• 1300-nm wafer-fused VCSELs with InGaAs/InAlGaAs superlattice-based active region (2022 · 被引 7)
• 1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers (2023 · Semiconductors · 被引 5)
• High-speed MBE-grown 1550 nm wafer-fused VCSELs (2024 · 被引 4)