Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems

作者：A. V. Babichev, S. A. Blokhin, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov, N. A. Maleev, V. V. Andryushkin, E. S. Kolodeznyi, Dmitrii V. Denisov, N. V. Kryzhanovskaya, K. O. Voropaev, V. M. Ustinov, A. Yu. Egorov, Hui Li, Si-Cong Tian, Saiyi Han, Georgiy Sapunov, D. Bimberg · 发表于：IEEE Photonics Technology Letters · 年份：2023 · DOI：10.1109/lpt.2023.3241001 · 被引用次数：24 · 研究领域：Semiconductor Lasers and Optical Devices、Photonic and Optical Devices、Semiconductor Quantum Structures and Devices

High power single-mode wafer fused 1550 nm VCSELs with an active region based on InGaAs quantum wells are fabricated. An InP-based optical cavity and two AlGaAs/GaAs distributed Bragg reflector heterostructures were grown by molecular-beam epita oy. The current and optical confinements are provided by a lateral-structured buried tunnel junction with$\sim ~6~\mu \text{m}$diameter and etching depth of ~ 20 nm. The VCSELs demonstrate ~ 3.4 mW single-mode continuous-wave output optical power and a threshold current about 2 mA at 20°C. The output optical power exceeds 1 mW at 70°C. A −3dB modulation bandwidth > 13 GHz is obtained at 20°C. Non-return-to-zero data transmission under back-to-back condition of ~ 37 Gbps is shown.