In-plane negative magnetoresistance and quantum oscillations in van der Waals antiferromagnet DyTe3

作者：Qi 琦 Qi 齐, Senhao 森浩 Lv 吕, K. Zhu 祝, Yaofeng 耀锋 Xie 谢, Guojing 国静 Hu 胡, Z. Zhao 赵, G. Xian 冼, Yechao 烨超 Han 韩, Y. Yang 杨, L. Bao 鲍, X. Lin 林, H. Guo 郭, H. Yang 杨, H. Gao 高 · 发表于：Chinese Physics B · 年份：2025 · DOI：10.1088/1674-1056/adcc87 · 被引用次数：1 · 研究领域：Physics

Two-dimensional van der Waals (vdW) magnetic materials, characterized by their tunable magnetism, spin transport properties, and remarkable quantum effects, provide significant promise for the development of efficient, low-power spintronic devices. Intriguingly, the rare earth tritelluride (RTe3) materials have attracted great attention due to their unique magnetic structure, exotic electronic properties, multiple charge density wave (CDW), and superconductivity under pressure. Here, we report the successful synthesis of high-quality DyTe3 single crystals using a self-flux method. DyTe3 shows an antiferromagnetic transition at 4.5 K and demonstrates the magnetic field-induced ferromagnetism. The high-quality DyTe3 single crystal demonstrates outstanding transport properties, featuring a high carrier mobility of approximately 1.4 × 104 cm2⋅V−1⋅s−1 and large linear magnetoresistance of 1300%. Furthermore, distinct Shubnikov–de Haas (SdH) oscillations are observed in DyTe3, revealing a small Fermi pocket and an effective mass of 0.24 me. Remarkably, the unconventional in-plane negative magnetoresistances appear along the a-axis below 2 T and c-axis until 9 T from 2 K to 17 K, which are attributed to the complex helimagnetic structures caused by CDW coupling and weak single-ion anisotropy. Our findings offer a significant platform for understanding the complex magnetoresistance behavior and quantum transport effects in RTe3-type materials, holding great promise for advancing appl...