Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

作者：Liying Zhai, Sara T. Gebre, Bo Chen, Dan-tong Xu, Junze Chen, Zijian Li, Yawei Liu, Huang Yang, Chongyi Ling, Yiyao Ge, Wei Zhai, Changsheng Chen, Lu Ma, Qinghua Zhang, Xuefei Li, Yujie Yan, Xinyu Huang, Lujiang Li, Zhiqiang Guan, Ch Tao, Zhiqi Huang, Hongyi Wang, Jinghong Liang, Ye Zhu, C. Lee, Peng Wang, Chunfeng Zhang, Lin Gu, Yonghua Du, T. Lian, Hua Zhang, Xuejun Wu · 发表于：Nature Communications · 年份：2023 · DOI：10.1038/s41467-023-38237-7 · 被引用次数：48 · 研究领域：Medicine

Epitaxial growth of heterostructures composed of materials with large lattice mismatch is challenging. Here, the authors reported the epitaxy of II-VI semiconductor nanorods on plasmonic noble metal, despite a lattice mismatch of more than 40%. Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigati...