Effects of annealing conditions on the interfacial adhesion energy of ALD Ru/ZnO films for advanced interconnects

作者：Daeyoon Jeong, Minjin Kim, Yeseul Son, Yuki Mori, Soo-Hyun Kim, Young-Bae Park · 发表于：Japanese Journal of Applied Physics · 年份：2026 · DOI：10.35848/1347-4065/ae7c0f · 研究领域：Physics

The effects of post-deposition annealing on the interfacial adhesion energy and film stress of Ru/ZnO thin films were systematically investigated using a double cantilever beam test and a multi-beam optical stress system, respectively. Interfacial adhesion energy increased from 2.03 ± 0.06 to 4.07 ± 0.16 J m−2 after annealing at 350 °C in Ar/H2 (4%), whereas it decreased when annealing at higher temperatures up to 500 °C. X-ray photoelectron spectroscopy revealed that Zn2SiO4 bonds were formed at the ZnO/SiO2 interface, this formation was most prominent at 350 °C. Zn2SiO4 bonds were considered to form through Zn diffusion from ZnO into SiO2 during annealing, increasing the interfacial adhesion energy. In terms of film stress, the initial compressive stress decreased from 1.05 to 0.60 GPa after post-deposition annealing at 350 °C, attributed to a decrease in impurities introduced during deposition and grain size increase accompanied by a volume reduction.