Giant intrinsic carrier mobilities in graphene and its bilayer.

作者：S. Morozov, K. Novoselov, M. Katsnelson, F. Schedin, D. Elias, J. Jaszczak, A.K. Geim · 发表于：Physical Review Letters · 年份：2007 · DOI：10.1103/physrevlett.100.016602 · 被引用次数：2960 · 研究领域：Physics、Medicine、Materials Science

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.