Drift-diffusion models for the simulation of a graphene field effect transistor

作者：Giovanni Nastasi, V. Romano · 发表于：Journal of Mathematics in Industry · 年份：2022 · DOI：10.1186/s13362-022-00120-3

A field effect transistor having the active area made of monolayer graphene is simulated by a drift-diffusion model coupled with the Poisson equation. The adopted geometry, already proposed in (Nastasi and Romano in IEEE Trans. Electron. Devices 68:4729–4734, 2021, https://doi.org/10.1109/TED.2021.3096492), gives a good current-ON/current-OFF ratio as it is evident in the simulations. In this paper, we compare the numerical simulations of the standard (non-degenerate) drift-diffusion model, that includes the Einstein diffusion coefficient, with the degenerate case.