Life on the Urbach Edge.

作者：Esma Ugur, M. Ledinský, Thomas G. Allen, J. Holovský, A. Vlk, S. De Wolf · 发表于：Journal of Physical Chemistry Letters · 年份：2022 · DOI：10.1021/acs.jpclett.2c01812 · 被引用次数：151 · 研究领域：Medicine

The Urbach energy is an expression of the static and dynamic disorder in a semiconductor and is directly accessible via optical characterization techniques. The strength of this metric is that it elegantly captures the optoelectronic performance potential of a semiconductor in a single number. For solar cells, the Urbach energy is found to be predictive of a material's minimal open-circuit-voltage deficit. Performance calculations considering the Urbach energy give more realistic power conversion efficiency limits than from classical Shockley-Queisser considerations. The Urbach energy is often also found to correlate well with the Stokes shift and (inversely) with the carrier mobility of a semiconductor. Here, we discuss key features, underlying physics, measurement techniques, and implications for device fabrication, underlining the utility of this metric.