Analysis of read voltage dependency of discrete shift and spike RTN in 40 nm TaOX-based ReRAM for CiM applications through a fine-grained extraction method

作者：Yushi Abarra, Naoko Misawa, C. Matsui, Ken Takeuchi · 发表于：Japanese Journal of Applied Physics · 年份：2026 · DOI：10.35848/1347-4065/ae4880 · 研究领域：Physics

This work investigates the read voltage dependence of discrete shift and spike random telegraph noise (RTN) in the readout current of 40 nm TaOX-based resistive RAM (ReRAM) designed for Computation-in-Memory (CiM) applications. The ReRAM is programmed to eight conductance states and evaluated under five read voltages. Three conventional RTN analysis methods are demonstrated and compared, and a spike extraction scheme is proposed to overcome their limitations. The proposed method reveals pronounced readout current instability in intermediate resistance states, which become more significant at higher read voltages. These findings indicate that lower read voltages are favorable for minimizing readout fluctuations in CiM applications, with 0.2 V identified as the optimal operating voltage for 3-bit ReRAM.